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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW131/A DESCRIPTION *High Switching Speed *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 450V (Min)-BUW131 500V (Min)-BUW131A APPLICATIONS *Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER BUW131 BUW131A BUW131 BUW131A VEBO IC ICM IB B MAX 850 UNIT VCES Collector- Emitter Voltage(VBE= 0) V 1000 450 V 500 6 8 16 6 12 125 200 -65~200 V A A A A W VCEO Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER BUW131 IC= 0.1A ; IB= 0; L= 10mH BUW131A BUW131 BUW131A BUW131 BUW131A BUW131 BUW131A ICEV IEBO hFE COB Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance IC= 3A; IB= 0.4A B BUW131/A CONDITIONS MIN 450 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V 500 1.0 V 1.0 2.5 V 2.5 1.5 V 1.5 0.25 1.5 1 5 200 pF mA mA VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A B VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.66A B IC= 5A; IB= 1A B VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.66A B IC= 5A; IB= 1A B VCE=VCESMmax;VBE=-1.5V VCE=VCESMmax;VBE=-1.5V;TJ=100 VEB= 6V; IC= 0 IC= 5A ; VCE= 5V IE= 0 ; VCB= 10V; ftest= 1kHz Switching Times , Resistive Load ton tstg tf Turn-On Time Storage Time Fall Time IC= 3A ;IB1= 0.4A;IB2= -0.8A 0.35 1.2 0.1 s s s isc Websitewww.iscsemi.cn |
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